| PART |
Description |
Maker |
| AM29LV200B AM29LV200BB-120EC AM29LV200BB-120ECB AM |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 80 ns, PDSO48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 128K X 16 FLASH 3V PROM, 90 ns, PDSO48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2兆位256Kx8Bit/128Kx16位）.0伏的CMOS引导扇区闪存
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2兆位56Kx8Bit/128Kx16位）.0伏的CMOS引导扇区闪存
|
http://
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| AM29F100-1 AM29F100B-120DGC AM29F100B-120DGC1 AM29 |
1 megabit CMOS 5.0 volt-only, boot sector flash memory
1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only/ Boot Sector Flash Memory-Die Revision 1
Hex Inverters 14-VQFN -40 to 85
1兆位28x 8-Bit/64x 16位）.0伏的CMOS只，引导扇区快闪记忆体模修订1
1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 128K X 8 FLASH 5V PROM, 120 ns, UUC47
1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 1兆位28亩x 8-Bit/64亩x 16位）.0伏的CMOS只，引导扇区快闪记忆体模修订1
Hex Inverters 14-TSSOP -40 to 85 1兆位28亩x 8-Bit/64亩x 16位）.0伏的CMOS只，引导扇区快闪记忆体模修订1
|
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
PROM
ADVANCED MICRO DEVICES INC
|
| EN71NS128C0 EN71NS128C0-7DCWP |
Stacked Multi-Chip Product (MCP) Flash Memory and RAM 128 Megabit (8M x 16-bit) CMOS 1.8 Volt-only Simultaneous Operation Burst Mode Flash Memory and 64 Megabit (4M x 16-bit) Pseudo Static RAM
|
Eon Silicon Solution Inc.
|
| AM28F010 AM28F010-200JEB AM28F010-150FIB AM28F010- |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 128K X 8 FLASH 12V PROM, 150 ns, PDIP32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 128K X 8 FLASH 12V PROM, 200 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 128K X 8 FLASH 12V PROM, 90 ns, PDSO32
CMOS Dual Binary Up-Counter 16-TSSOP -55 to 125
CMOS Dual Binary Up-Counter 16-SO -55 to 125
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory
|
ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
|
| AM29LV200 AM29LV200B-100EC AM29LV200B-100ECB AM29L |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
|
AMD[Advanced Micro Devices]
|
| AM29F200BB-45EC AM29F200BB-45ED AM29F200BB-45EF AM |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
|
http://
|
| AM29F100T-70EC AM29F100T-70ECB AM29F100T-70EE AM29 |
1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only/ Boot Sector Flash Memory-Die Revision 1
|
Advanced Micro Devices
|
| AM29LV128MH100PCF AM29LV128MH103EI AM29LV128MH103P |
128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
|
AMD[Advanced Micro Devices]
|
| AM29BDS128HD9VFI AM29BDS64HD8VKI AM29BDS128HD8VKI |
128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 12864兆位米或4个M x 16位）的CMOS 1.8伏，只有同时写，突发模式闪存
128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 8M X 16 FLASH 1.8V PROM, 50 ns, PBGA80
128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 1284兆位米或4个M x 16位）的CMOS 1.8伏，只有同时写，突发模式闪存
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| AM29LV642DU90RPAI AM29LV642DU12RPAE AM29LV642DU12R |
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
PC Board Fuse; Current Rating:400mA-10A; Voltage Rating:250V; Fuse Terminals:Radial Lead; Fuse Size/Group:Subminiature; Fuse Type:Fast Acting; Interrupting Current Max:50A; Packaging:Bulk
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
